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| savantic semiconductor product specification silicon npn power transistors NS50B description with to-220c package complement to type ns50a applications for medium power linear switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 6 a i cm collector current-pulse 10 a t c =25 65 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors NS50B characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =30ma; i b =0 60 v v ce ( sat) collector-emitter saturation voltage i c =4a; i b =0.4a 1.0 v v be ( sat) base-emitter saturation voltage i c =4a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =100v; i e =0 10 a i ceo collector cut-off current v ce =60v; i b =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 10 a h fe dc current gain i c =1a ; v ce =5v 100 160 f t transition frequency i c =0.5a ; v ce =10v 3 mhz savantic semiconductor product specification 3 silicon npn power transistors NS50B package outline fig.2 outline dimensions |
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